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IXTA1R6N100D2

IXTA1R6N100D2

IXTA1R6N100D2

IXYS

MOSFET N-CH 1000V 1.6A TO263

non-compliant

IXTA1R6N100D2 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $2.42000 $2.42
50 $1.95000 $97.5
100 $1.75500 $175.5
500 $1.36500 $682.5
1,000 $1.13100 -
2,500 $1.09200 -
4 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 10Ohm @ 800mA, 0V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 645 pF @ 25 V
FET Feature Depletion Mode
Power Dissipation (Max) 100W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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