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IXTA1R4N120P

IXTA1R4N120P

IXTA1R4N120P

IXYS

MOSFET N-CH 1200V 1.4A TO263

compliant

IXTA1R4N120P Pricing & Ordering

Quantity Unit Price Ext. Price
50 $3.24000 $162
Inventory changes frequently.
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 13Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 24.8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 666 pF @ 25 V
FET Feature -
Power Dissipation (Max) 86W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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