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IXTA1N100P-TRL

IXTA1N100P-TRL

IXTA1N100P-TRL

IXYS

MOSFET N-CH 1000V 1A TO263

compliant

IXTA1N100P-TRL Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.68765 $1.68765
500 $1.6707735 $835.38675
1000 $1.653897 $1653.897
1500 $1.6370205 $2455.53075
2000 $1.620144 $3240.288
2500 $1.6032675 $4008.16875
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 15Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 15.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 331 pF @ 25 V
FET Feature -
Power Dissipation (Max) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D2Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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