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IXFT6N100F

IXFT6N100F

IXFT6N100F

IXYS

MOSFET N-CH 1000V 6A TO268

compliant

IXFT6N100F Pricing & Ordering

Quantity Unit Price Ext. Price
1 $10.03000 $10.03
30 $8.22067 $246.6201
120 $7.41850 $890.22
510 $6.21551 $3169.9101
1,020 $5.61400 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.9Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1770 pF @ 25 V
FET Feature -
Power Dissipation (Max) 180W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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