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IXFT18N100Q3

IXFT18N100Q3

IXFT18N100Q3

IXYS

MOSFET N-CH 1000V 18A TO268

non-compliant

IXFT18N100Q3 Pricing & Ordering

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30 $13.24600 $397.38
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 660mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4890 pF @ 25 V
FET Feature -
Power Dissipation (Max) 830W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268AA
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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