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IXFN32N120P

IXFN32N120P

IXFN32N120P

IXYS

MOSFET N-CH 1200V 32A SOT-227B

compliant

IXFN32N120P Pricing & Ordering

Quantity Unit Price Ext. Price
1 $55.35000 $55.35
10 $51.76200 $517.62
30 $47.87200 $1436.16
100 $44.88000 $4488
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 310mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 360 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 21000 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1000W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B
Package / Case SOT-227-4, miniBLOC
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