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IXFN20N120P

IXFN20N120P

IXFN20N120P

IXYS

MOSFET N-CH 1200V 20A SOT-227B

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IXFN20N120P Pricing & Ordering

Quantity Unit Price Ext. Price
10 $34.22500 $342.25
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 570mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 193 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 11100 pF @ 25 V
FET Feature -
Power Dissipation (Max) 595W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B
Package / Case SOT-227-4, miniBLOC
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