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IXFN110N85X

IXFN110N85X

IXFN110N85X

IXYS

MOSFET N-CH 850V 110A SOT227B

compliant

IXFN110N85X Pricing & Ordering

Quantity Unit Price Ext. Price
1 $46.64000 $46.64
10 $43.61300 $436.13
100 $37.81500 $3781.5
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 850 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 33mOhm @ 55A, 10V
Vgs(th) (Max) @ Id 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 425 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 17000 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1170W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B
Package / Case SOT-227-4, miniBLOC
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