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IXFH7N100P

IXFH7N100P

IXFH7N100P

IXYS

MOSFET N-CH 1000V 7A TO247

compliant

IXFH7N100P Pricing & Ordering

Quantity Unit Price Ext. Price
30 $6.41667 $192.5001
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.9Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id 6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2590 pF @ 25 V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247 (IXTH)
Package / Case TO-247-3
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