Welcome to ichome.com!

logo
Home

SPB80P06PGATMA1

SPB80P06PGATMA1

SPB80P06PGATMA1

MOSFET P-CH 60V 80A TO263-3

non-compliant

SPB80P06PGATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $1.92485 -
2,000 $1.82861 -
5,000 $1.75986 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 23mOhm @ 64A, 10V
Vgs(th) (Max) @ Id 4V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs 173 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5033 pF @ 25 V
FET Feature -
Power Dissipation (Max) 340W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.