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ISP25DP06NMXTSA1

ISP25DP06NMXTSA1

ISP25DP06NMXTSA1

MOSFET P-CH 60V 1.9A SOT223-4

compliant

ISP25DP06NMXTSA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.43640 $0.4364
500 $0.432036 $216.018
1000 $0.427672 $427.672
1500 $0.423308 $634.962
2000 $0.418944 $837.888
2500 $0.41458 $1036.45
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 10.8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 420 pF @ 30 V
FET Feature -
Power Dissipation (Max) 1.8W (Ta), 4.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223-4
Package / Case TO-261-4, TO-261AA
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