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ISC022N10NM6ATMA1

ISC022N10NM6ATMA1

ISC022N10NM6ATMA1

TRENCH >=100V PG-TSON-8

compliant

ISC022N10NM6ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $5.50000 $5.5
500 $5.445 $2722.5
1000 $5.39 $5390
1500 $5.335 $8002.5
2000 $5.28 $10560
2500 $5.225 $13062.5
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 25A (Ta), 230A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Rds On (Max) @ Id, Vgs 2.24mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.3V @ 147µA
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6880 pF @ 50 V
FET Feature -
Power Dissipation (Max) 3W (Ta), 254W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSON-8-3
Package / Case 8-PowerTDFN
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