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IRFH5110TR2PBF

IRFH5110TR2PBF

IRFH5110TR2PBF

MOSFET N-CH 100V 5X6 PQFN

compliant

IRFH5110TR2PBF Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
2000 $0 $0
2500 $0 $0
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 12.4mOhm @ 37A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds 3152 pF @ 25 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -
Mounting Type Surface Mount
Supplier Device Package 8-PQFN (5x6)
Package / Case 8-PowerVDFN
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