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Name | Value |
---|---|
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25 V |
Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 160A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 1.3mOhm @ 33A, 10V |
Vgs(th) (Max) @ Id | 2.1V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 4.5 V |
Vgs (Max) | ±16V |
Input Capacitance (Ciss) (Max) @ Vds | 4160 pF @ 13 V |
FET Feature | Schottky Diode (Body) |
Power Dissipation (Max) | 2.1W (Ta), 54W (Tc) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET™ MX |
Package / Case | DirectFET™ Isometric MX |
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