Welcome to ichome.com!

logo
Home

IQE065N10NM5CGATMA1

IQE065N10NM5CGATMA1

IQE065N10NM5CGATMA1

TRENCH >=100V PG-TTFN-9

compliant

IQE065N10NM5CGATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $3.35000 $3.35
500 $3.3165 $1658.25
1000 $3.283 $3283
1500 $3.2495 $4874.25
2000 $3.216 $6432
2500 $3.1825 $7956.25
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 14A (Ta), 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.8V @ 48µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 50 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank
Supplier Device Package PG-TTFN-9-1
Package / Case 8-PowerTDFN
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.