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IQE030N06NM5CGATMA1

IQE030N06NM5CGATMA1

IQE030N06NM5CGATMA1

TRENCH 40<-<100V PG-TTFN-9

compliant

IQE030N06NM5CGATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $3.38000 $3.38
500 $3.3462 $1673.1
1000 $3.3124 $3312.4
1500 $3.2786 $4917.9
2000 $3.2448 $6489.6
2500 $3.211 $8027.5
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 21A (Ta), 137A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.3V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3800 pF @ 30 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 107W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank
Supplier Device Package PG-TTFN-9-1
Package / Case 8-PowerTDFN
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