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IPW65R110CFDFKSA2

IPW65R110CFDFKSA2

IPW65R110CFDFKSA2

MOSFET N-CH 650V 31.2A TO247-3

SOT-23

non-compliant

IPW65R110CFDFKSA2 Pricing & Ordering

Quantity Unit Price Ext. Price
240 $5.26679 $1264.0296
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs 118 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3240 pF @ 100 V
FET Feature -
Power Dissipation (Max) 277.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-41
Package / Case TO-247-3
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