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IPW65R095C7

IPW65R095C7

IPW65R095C7

MOSFET N-CH 650V 24A TO247

compliant

IPW65R095C7 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
2000 $0 $0
2500 $0 $0
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 95mOhm @ 11.8A, 10V
Vgs(th) (Max) @ Id 4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2140 pF @ 400 V
FET Feature -
Power Dissipation (Max) 128W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247
Package / Case TO-247-3
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