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IPU10N03LA G

IPU10N03LA G

IPU10N03LA G

MOSFET N-CH 25V 30A TO251-3

compliant

IPU10N03LA G Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1358 pF @ 15 V
FET Feature -
Power Dissipation (Max) 52W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package P-TO251-3-1
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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