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IPTG018N10NM5ATMA1

IPTG018N10NM5ATMA1

IPTG018N10NM5ATMA1

TRENCH >=100V PG-HSOG-8

compliant

IPTG018N10NM5ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $4.44000 $4.44
500 $4.3956 $2197.8
1000 $4.3512 $4351.2
1500 $4.3068 $6460.2
2000 $4.2624 $8524.8
2500 $4.218 $10545
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 32A (Ta), 273A Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.8mOhm @ 150A, 10V
Vgs(th) (Max) @ Id 3.8V @ 202µA
Gate Charge (Qg) (Max) @ Vgs 152 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11000 pF @ 50 V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 273W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HSOG-8-1
Package / Case 8-PowerSFN
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