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IPT026N10N5ATMA1

IPT026N10N5ATMA1

IPT026N10N5ATMA1

MOSFET N-CH 100V 27A/202A 8HSOF

compliant

IPT026N10N5ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $6.26000 $6.26
500 $6.1974 $3098.7
1000 $6.1348 $6134.8
1500 $6.0722 $9108.3
2000 $6.0096 $12019.2
2500 $5.947 $14867.5
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 27A (Ta), 202A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2.6mOhm @ 150A, 10V
Vgs(th) (Max) @ Id 3.8V @ 158µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8800 pF @ 50 V
FET Feature -
Power Dissipation (Max) 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-8-1
Package / Case 8-PowerSFN
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