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IPS80R900P7AKMA1

IPS80R900P7AKMA1

IPS80R900P7AKMA1

MOSFET N-CH 800V 6A TO251-3

compliant

IPS80R900P7AKMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.51000 $1.51
10 $1.34600 $13.46
100 $1.07870 $107.87
500 $0.85250 $426.25
1,000 $0.68798 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 110µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 500 V
FET Feature -
Power Dissipation (Max) 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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