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IPP80R1K4P7XKSA1

IPP80R1K4P7XKSA1

IPP80R1K4P7XKSA1

MOSFET N-CH 800V 4A TO220-3

compliant

IPP80R1K4P7XKSA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.45000 $1.45
10 $1.28300 $12.83
100 $1.01360 $101.36
500 $0.78604 $393.02
1,000 $0.62057 -
412 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 500 V
FET Feature Super Junction
Power Dissipation (Max) 32W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
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