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IPP65R125C7XKSA1

IPP65R125C7XKSA1

IPP65R125C7XKSA1

MOSFET N-CH 650V 18A TO220-3

compliant

IPP65R125C7XKSA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $4.93000 $4.93
10 $4.39900 $43.99
100 $3.60730 $360.73
500 $2.92106 $1460.53
1,000 $2.46354 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id 4V @ 440µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1670 pF @ 400 V
FET Feature -
Power Dissipation (Max) 101W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
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