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IPP110N20NAAKSA1

IPP110N20NAAKSA1

IPP110N20NAAKSA1

MOSFET N-CH 200V 88A TO220-3

non-compliant

IPP110N20NAAKSA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $8.53000 $8.53
10 $7.68000 $76.8
100 $6.31480 $631.48
500 $5.29078 $2645.39
1,000 $4.60810 -
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 10.7mOhm @ 88A, 10V
Vgs(th) (Max) @ Id 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 87 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7100 pF @ 100 V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
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