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IPN80R600P7ATMA1

IPN80R600P7ATMA1

IPN80R600P7ATMA1

MOSFET N-CH 800V 8A SOT223

compliant

IPN80R600P7ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.79597 -
6,000 $0.76055 -
15,000 $0.73524 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 500 V
FET Feature -
Power Dissipation (Max) 7.4W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223
Package / Case TO-261-4, TO-261AA
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