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IPN80R600P7ATMA1

IPN80R600P7ATMA1

IPN80R600P7ATMA1

MOSFET N-CH 800V 8A SOT223

non-compliant

IPN80R600P7ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.79597 -
6,000 $0.76055 -
15,000 $0.73524 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 500 V
FET Feature -
Power Dissipation (Max) 7.4W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223
Package / Case TO-261-4, TO-261AA
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