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IPN70R2K0P7SATMA1

IPN70R2K0P7SATMA1

IPN70R2K0P7SATMA1

MOSFET N-CH 700V 3A SOT223

compliant

IPN70R2K0P7SATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.22247 -
6,000 $0.20956 -
15,000 $0.19665 -
30,000 $0.18761 -
29 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs 3.8 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 130 pF @ 400 V
FET Feature -
Power Dissipation (Max) 6W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223
Package / Case TO-261-4, TO-261AA
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