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IPN50R800CEATMA1

IPN50R800CEATMA1

IPN50R800CEATMA1

MOSFET N-CH 500V 7.6A SOT223

compliant

IPN50R800CEATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.27269 -
6,000 $0.25686 -
15,000 $0.24103 -
30,000 $0.22995 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 13V
Rds On (Max) @ Id, Vgs 800mOhm @ 1.5A, 13V
Vgs(th) (Max) @ Id 3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 12.4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 280 pF @ 100 V
FET Feature -
Power Dissipation (Max) 5W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223
Package / Case TO-261-4, TO-261AA
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