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IPL60R2K1C6SATMA1

IPL60R2K1C6SATMA1

IPL60R2K1C6SATMA1

MOSFET N-CH 600V 2.3A THIN-PAK

non-compliant

IPL60R2K1C6SATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.30000 $0.3
500 $0.297 $148.5
1000 $0.294 $294
1500 $0.291 $436.5
2000 $0.288 $576
2500 $0.285 $712.5
176342 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.1Ohm @ 760mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 60µA
Gate Charge (Qg) (Max) @ Vgs 6.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 100 V
FET Feature -
Power Dissipation (Max) 21.6W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSON-8-2
Package / Case 8-PowerTDFN
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