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IPL60R1K5C6SATMA1

IPL60R1K5C6SATMA1

IPL60R1K5C6SATMA1

MOSFET N-CH 600V 3A THIN-PAK

non-compliant

IPL60R1K5C6SATMA1 Pricing & Ordering

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5,000 $0.43276 -
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Name Value
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 9.4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 100 V
FET Feature -
Power Dissipation (Max) 26.6W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-ThinPak (5x6)
Package / Case 8-PowerTDFN
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