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IPI90R1K2C3XKSA1

IPI90R1K2C3XKSA1

IPI90R1K2C3XKSA1

MOSFET N-CH 900V 5.1A TO262-3

compliant

IPI90R1K2C3XKSA1 Pricing & Ordering

Quantity Unit Price Ext. Price
500 $1.02410 $512.05
1300 items
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Bom Cost Down
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Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 310µA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 710 pF @ 100 V
FET Feature -
Power Dissipation (Max) 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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