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IPI80P03P4L04AKSA1

IPI80P03P4L04AKSA1

IPI80P03P4L04AKSA1

MOSFET P-CH 30V 80A TO262-3

compliant

IPI80P03P4L04AKSA1 Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 253µA
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V
Vgs (Max) +5V, -16V
Input Capacitance (Ciss) (Max) @ Vds 11300 pF @ 25 V
FET Feature -
Power Dissipation (Max) 137W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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