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IPI65R110CFDXKSA1

IPI65R110CFDXKSA1

IPI65R110CFDXKSA1

MOSFET N-CH 650V 31.2A TO262-3

compliant

IPI65R110CFDXKSA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $2.55000 $2.55
500 $2.5245 $1262.25
1000 $2.499 $2499
1500 $2.4735 $3710.25
2000 $2.448 $4896
2500 $2.4225 $6056.25
16398 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs 118 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3240 pF @ 100 V
FET Feature -
Power Dissipation (Max) 277.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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