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IPI60R385CPXKSA1

IPI60R385CPXKSA1

IPI60R385CPXKSA1

MOSFET N-CH 650V 9A TO262-3

compliant

IPI60R385CPXKSA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.95000 $0.95
500 $0.9405 $470.25
1000 $0.931 $931
1500 $0.9215 $1382.25
2000 $0.912 $1824
2500 $0.9025 $2256.25
16041 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 385mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 340µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 790 pF @ 100 V
FET Feature -
Power Dissipation (Max) 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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