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IPI076N12N3GAKSA1

IPI076N12N3GAKSA1

IPI076N12N3GAKSA1

MOSFET N-CH 120V 100A TO262-3

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IPI076N12N3GAKSA1 Pricing & Ordering

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500 $1.84500 $922.5
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 101 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6640 pF @ 60 V
FET Feature -
Power Dissipation (Max) 188W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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