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IPI045N10N3GXKSA1

IPI045N10N3GXKSA1

IPI045N10N3GXKSA1

MOSFET N-CH 100V 100A TO262-3

compliant

IPI045N10N3GXKSA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $3.56000 $3.56
10 $3.18100 $31.81
100 $2.60860 $260.86
500 $2.11232 $1056.16
1,000 $1.78147 -
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 117 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8410 pF @ 50 V
FET Feature -
Power Dissipation (Max) 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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