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IPI024N06N3GXKSA1

IPI024N06N3GXKSA1

IPI024N06N3GXKSA1

MOSFET N-CH 60V 120A TO262-3

compliant

IPI024N06N3GXKSA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $3.30000 $3.3
10 $2.97600 $29.76
100 $2.39160 $239.16
500 $1.86012 $930.06
1,000 $1.54125 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 196µA
Gate Charge (Qg) (Max) @ Vgs 275 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 23000 pF @ 30 V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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