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IPG20N06S4L11AATMA1

IPG20N06S4L11AATMA1

IPG20N06S4L11AATMA1

MOSFET 2N-CH 8TDSON

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IPG20N06S4L11AATMA1 Pricing & Ordering

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5,000 $0.95281 -
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Name Value
Product Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 20A
Rds On (Max) @ Id, Vgs 11.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.2V @ 28µA
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 4020pF @ 25V
Power - Max 65W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank
Package / Case 8-PowerVDFN
Supplier Device Package PG-TDSON-8-10
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