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IPDD60R102G7XTMA1

IPDD60R102G7XTMA1

IPDD60R102G7XTMA1

MOSFET N-CH 600V 23A HDSOP-10

compliant

IPDD60R102G7XTMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1,700 $2.96188 -
3,400 $2.81379 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 102mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id 4V @ 390µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1320 pF @ 400 V
FET Feature -
Power Dissipation (Max) 139W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HDSOP-10-1
Package / Case 10-PowerSOP Module
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