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IPD90R1K2C3ATMA2

IPD90R1K2C3ATMA2

IPD90R1K2C3ATMA2

MOSFET N-CH 900V 2.1A TO252-3

compliant

IPD90R1K2C3ATMA2 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.21100 $1.211
500 $1.19889 $599.445
1000 $1.18678 $1186.78
1500 $1.17467 $1762.005
2000 $1.16256 $2325.12
2500 $1.15045 $2876.125
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 0.31mA
Gate Charge (Qg) (Max) @ Vgs 3.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 710 pF @ 100 V
FET Feature -
Power Dissipation (Max) 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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