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IPD60R450E6ATMA1

IPD60R450E6ATMA1

IPD60R450E6ATMA1

MOSFET N-CH 600V 9.2A TO252-3

compliant

IPD60R450E6ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.61000 $0.61
500 $0.6039 $301.95
1000 $0.5978 $597.8
1500 $0.5917 $887.55
2000 $0.5856 $1171.2
2500 $0.5795 $1448.75
9353 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 280µA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 620 pF @ 100 V
FET Feature -
Power Dissipation (Max) 74W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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