Welcome to ichome.com!

logo
Home

IPD60R380C6ATMA1

IPD60R380C6ATMA1

IPD60R380C6ATMA1

MOSFET N-CH 600V 10.6A TO252-3

compliant

IPD60R380C6ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.95107 -
5,000 $0.91984 -
12,500 $0.90280 -
43571 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 10.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 100 V
FET Feature -
Power Dissipation (Max) 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

STD9HN65M2
SI5618-TP
NTMFS5C612NT1G-TE
NTMFS5C612NT1G-TE
$0 $/piece
RK7002BMT116
NTD3055-094T4G
NTD3055-094T4G
$0 $/piece
APT17F100B
IXTQ40N50L2
IXTQ40N50L2
$0 $/piece

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.