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IPD60R360CFD7ATMA1

IPD60R360CFD7ATMA1

IPD60R360CFD7ATMA1

MOSFET N-CH 650V 7A TO252-3-313

non-compliant

IPD60R360CFD7ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $2.54000 $2.54
500 $2.5146 $1257.3
1000 $2.4892 $2489.2
1500 $2.4638 $3695.7
2000 $2.4384 $4876.8
2500 $2.413 $6032.5
1900 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 4.5V @ 140µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 679 pF @ 400 V
FET Feature -
Power Dissipation (Max) 43W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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