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IPD60R1K5CEATMA1

IPD60R1K5CEATMA1

IPD60R1K5CEATMA1

MOSFET N-CH 600V 3.1A TO252-3

compliant

IPD60R1K5CEATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.21979 -
5,000 $0.20561 -
12,500 $0.19143 -
25,000 $0.18150 -
23 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 9.4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 100 V
FET Feature -
Power Dissipation (Max) 28W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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