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IPD50R650CEAUMA1

IPD50R650CEAUMA1

IPD50R650CEAUMA1

MOSFET N-CH 500V 9A TO252-3

compliant

IPD50R650CEAUMA1 Pricing & Ordering

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2,500 $0.32107 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 13V
Rds On (Max) @ Id, Vgs 650mOhm @ 1.8A, 13V
Vgs(th) (Max) @ Id 3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 342 pF @ 100 V
FET Feature -
Power Dissipation (Max) 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-344
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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