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IPD50R500CEAUMA1

IPD50R500CEAUMA1

IPD50R500CEAUMA1

MOSFET N-CH 550V 7.6A TO252

non-compliant

IPD50R500CEAUMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.40841 -
5,000 $0.38324 -
12,500 $0.37066 -
25,000 $0.36379 -
1354 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 550 V
Current - Continuous Drain (Id) @ 25°C 7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 13V
Rds On (Max) @ Id, Vgs 500mOhm @ 2.3A, 13V
Vgs(th) (Max) @ Id 3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 18.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 433 pF @ 100 V
FET Feature -
Power Dissipation (Max) 57W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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