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IPD50N04S410ATMA1

IPD50N04S410ATMA1

IPD50N04S410ATMA1

MOSFET N-CH 40V 50A TO252-3-313

non-compliant

IPD50N04S410ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.31214 -
5,000 $0.29061 -
12,500 $0.27985 -
25,000 $0.27398 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 9.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 15µA
Gate Charge (Qg) (Max) @ Vgs 18.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1430 pF @ 25 V
FET Feature -
Power Dissipation (Max) 41W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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