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IPD30N06S215ATMA2

IPD30N06S215ATMA2

IPD30N06S215ATMA2

MOSFET N-CH 55V 30A TO252-31

compliant

IPD30N06S215ATMA2 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.52021 -
5,000 $0.49420 -
12,500 $0.47562 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 14.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 80µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1485 pF @ 25 V
FET Feature -
Power Dissipation (Max) 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-11
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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