Welcome to ichome.com!

logo
Home

IPD16CNE8N G

IPD16CNE8N G

IPD16CNE8N G

MOSFET N-CH 85V 53A TO252-3

compliant

IPD16CNE8N G Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
2000 $0 $0
2500 $0 $0
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 85 V
Current - Continuous Drain (Id) @ 25°C 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 53A, 10V
Vgs(th) (Max) @ Id 4V @ 61µA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3230 pF @ 40 V
FET Feature -
Power Dissipation (Max) 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

SI4752DY-T1-GE3
SI7462DP-T1-E3
STP6N52K3
STP6N52K3
$0 $/piece
IRLR4343
IPI90R800C3
IRF840LCS
IRF840LCS
$0 $/piece
IPP12CNE8N G
PHP225NQ04T,127
PHP225NQ04T,127
$0 $/piece
FDD9511L-F085
FDD9511L-F085
$0 $/piece

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.