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IPD135N03LGATMA1

IPD135N03LGATMA1

IPD135N03LGATMA1

MOSFET N-CH 30V 30A TO252-3

SOT-23

non-compliant

IPD135N03LGATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.29125 -
5,000 $0.27116 -
12,500 $0.26112 -
25,000 $0.25564 -
11712 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 13.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 15 V
FET Feature -
Power Dissipation (Max) 31W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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